pnp silicon planar medium power darlington transistor issue 1 ? may 94 features * 60 volt v ceo * 0.8 amp continuous current * gain of 10k at i c =0.5 amp applications * lamp, solenoid and relay drivers absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -80 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -10 v peak pulse current i cm -2 a continuous collector current i c -800 ma power dissipation at t amb = 25c derate above 25c p tot 1 5.7 w mw/ c operating and storage temperature range t j :t stg -55 to +200 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. collector-base breakdown voltage v (br)cbo -80 v i c =-10 m a collector-emitter breakdown voltage v ceo(sus) -60 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -10 v i e =-10 m a collector cut-off current i cbo -100 na v cb =-60v, i e =0 emitter cut-off current i ebo -100 na v eb =-8v, i c =0 collector-emitter saturation voltage v ce(sat) -1.25 v i c =-800ma, i b =-8ma* base-emitter turn-on voltage v be(on) -1.8 v ic=-800ma, v ce =-5v* static forward current transfer ratio h fe 5k 10k i c =-100ma, v ce =-5v* i c =-500ma, v ce =-5v* *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% ZTX712 3-253 c b e e-line to92 compatible not recommended for new design please use ztx705
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